Method and structure for forming stairs in three-dimensional memory devices

ABSTRACT

Embodiments of a three-dimensional (3D) memory device and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a memory stack having a plurality of stairs. Each stair may include interleaved one or more conductor layers and one or more dielectric layers. Each of the stairs includes one of the conductor layers on a top surface of the stair, the one of the conductor layers having (i) a bottom portion in contact with one of the dielectric layers, and (ii) a top portion exposed by the memory stack and in contact with the bottom portion. A lateral dimension of the top portion may be less than a lateral dimension of the bottom portion. An end of the top portion that may be facing away from the memory stack laterally exceeds the bottom portion by a distance.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/727,896, filed on Dec. 26, 2019, which is a continuation ofInternational Application No. PCT/CN2019/115668, filed on Nov. 5, 2019.The entire contents of each of the above-identified applications areexpressly incorporated herein by reference.

BACKGROUND

Embodiments of the present disclosure relate to three-dimensional (3D)memory devices and fabrication methods thereof.

Planar memory cells are scaled to smaller sizes by improving processtechnology, circuit design, programming algorithm, and fabricationprocess. However, as feature sizes of the memory cells approach a lowerlimit, planar process and fabrication techniques become challenging andcostly. As a result, memory density for planar memory cells approachesan upper limit.

A 3D memory architecture can address the density limitation in planarmemory cells. The 3D memory architecture includes a memory array andperipheral devices for controlling signals to and from the memory array.

SUMMARY

Embodiments of 3D memory devices and fabrication methods thereof aredisclosed herein.

In one example, a 3D memory device includes a memory stack having aplurality of stairs. Each stair may include interleaved one or moreconductor layers and one or more dielectric layers. Each of the stairsincludes one of the conductor layers on a top surface of the stair, theone of the conductor layers having (i) a bottom portion in contact withone of the dielectric layers, and (ii) a top portion exposed by thememory stack and in contact with the bottom portion. A lateral dimensionof the top portion may be less than a lateral dimension of the bottomportion. An end of the top portion that may be facing away from thememory stack laterally exceeds the bottom portion by a distance.

In another example, a 3D memory device includes a memory stack having aplurality of stairs. Each stair may include interleaved one or moreconductor layers and one or more dielectric layers. Each of the stairsmay include one of the conductor layers on a top surface of the stair.The one of the conductor layers may include (i) a bottom portion incontact with one of the dielectric layers, and (ii) a top portionexposed by the memory stack and in contact with the bottom portion. Anend of the top portion that may be facing away from the memory stacklaterally exceeds the bottom portion by a distance in a range of about0.1 nm to about 20 nm.

In still another example, a method for forming a 3D memory deviceincludes the following operations. First, a dielectric stack may beformed to have interleaved a plurality of sacrificial layers and aplurality of dielectric layers. A stair may be formed in the dielectricstack. The stair may include one or more sacrificial layers of theplurality of sacrificial layers and one or more dielectric layers of theplurality of dielectric layers. The stair may expose one of thesacrificial layers on a top surface and the one or more sacrificiallayers on a side surface. An insulating portion may be formed to coverthe side surface of the stair to cover the one or more sacrificiallayers. A sacrificial portion may be formed to cover the top surface ofthe stair, the sacrificial portion being in contact with the one ofsacrificial layers. The one or more sacrificial layers and thesacrificial portion may be replaced with one or more conductor layers.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are incorporated herein and form a partof the specification, illustrate embodiments of the present disclosureand, together with the description, further serve to explain theprinciples of the present disclosure and to enable a person skilled inthe pertinent art to make and use the present disclosure.

FIG. 1 illustrates a schematic view of a 3D memory device having aplurality of stairs.

FIGS. 2A-2D illustrate a method for forming stairs in a 3D memorydevice.

FIGS. 3A-3F illustrate an exemplary method for forming stairs in a 3Dmemory device, according to some embodiments.

FIG. 4 illustrates a flowchart of an exemplary method for forming stairsin a 3D memory device, according to some embodiments.

Embodiments of the present disclosure will be described with referenceto the accompanying drawings.

DETAILED DESCRIPTION

Although specific configurations and arrangements are discussed, itshould be understood that this is done for illustrative purposes only. Aperson skilled in the pertinent art will recognize that otherconfigurations and arrangements can be used without departing from thespirit and scope of the present disclosure. It will be apparent to aperson skilled in the pertinent art that the present disclosure can alsobe employed in a variety of other applications.

It is noted that references in the specification to “one embodiment,”“an embodiment,” “an example embodiment,” “some embodiments,” etc.,indicate that the embodiment described may include a particular feature,structure, or characteristic, but every embodiment may not necessarilyinclude the particular feature, structure, or characteristic. Moreover,such phrases do not necessarily refer to the same embodiments. Further,when a particular feature, structure, or characteristic is described inconnection with an embodiment, it would be within the knowledge of aperson skilled in the pertinent art to affect such feature, structure,or characteristic in connection with other embodiments whether or notexplicitly described.

In general, terminology may be understood at least in part from usage incontext. For example, the term “one or more” as used herein, dependingat least in part upon context, may be used to describe any feature,structure, or characteristic in a singular sense or may be used todescribe combinations of features, structures, or characteristics in aplural sense. Similarly, terms, such as “a,” “an,” or “the,” again, maybe understood to convey a singular usage or to convey a plural usage,depending at least in part upon context. In addition, the term “basedon” may be understood as not necessarily intended to convey an exclusiveset of factors and may, instead, allow for the existence of additionalfactors not necessarily expressly described, again, depending at leastin part on context.

It should be readily understood that the meaning of “on,” “above,” and“over” in the present disclosure should be interpreted in the broadestmanner such that “on” not only means “directly on” something but alsoincludes the meaning of “on” something with an intermediate feature or alayer therebetween, and that “above” or “over” not only means themeaning of “above” or “over” something but can also include the meaningit is “above” or “over” something with no intermediate feature or layertherebetween (i.e., directly on something).

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

As used herein, the term “substrate” refers to a material onto whichsubsequent material layers are added. The substrate itself can bepatterned. Materials added on top of the substrate can be patterned orcan remain unpatterned. Furthermore, the substrate can include a widearray of semiconductor materials, such as silicon, germanium, galliumarsenide, indium phosphide, etc. Alternatively, the substrate can bemade from an electrically non-conductive material, such as glass,plastic, or a sapphire wafer.

As used herein, the term “layer” refers to a material portion includinga region with a thickness. A layer can extend over the entirety of anunderlying or overlying structure or may have an extent less than theextent of an underlying or overlying structure. Further, a layer can bea region of a homogeneous or inhomogeneous continuous structure that hasa thickness less than the thickness of the continuous structure. Forexample, a layer can be located between any pair of horizontal planesbetween, or at, a top surface and a bottom surface of the continuousstructure. A layer can extend horizontally, vertically, and/or along atapered surface. A substrate can be a layer, can include one or morelayers therein, and/or can have one or more layers thereupon,thereabove, and/or therebelow. A layer can include multiple layers. Forexample, an interconnect layer can include one or more conductor andcontact layers (in which interconnect lines and/or via contacts areformed) and one or more dielectric layers.

As used herein, the term “nominal/nominally” refers to a desired, ortarget, value of a characteristic or parameter for a component or aprocess operation, set during the design phase of a product or aprocess, together with a range of values above and/or below the desiredvalue. The range of values can be due to slight variations inmanufacturing processes or tolerances. As used herein, the term “about”indicates the value of a given quantity that can vary based on aparticular technology node associated with the subject semiconductordevice. Based on the particular technology node, the term “about” canindicate a value of a given quantity that varies within, for example,10-30% of the value (e.g., ±10%, ±20%, or ±30% of the value).

As used herein, the term “(3D memory string” refers to avertically-oriented string of memory cell transistors connected inseries on a laterally-oriented substrate so that the string of memorycell transistors extends in the vertical direction with respect to thesubstrate. As used herein, the term “vertical/vertically” meansnominally perpendicular to the lateral surface of a substrate.

As used herein, the terms “stair,” “step,” and “level” can be usedinterchangeably. As used herein, a staircase structure refers to a setof surfaces that include at least two horizontal surfaces and at leasttwo vertical surfaces such that each horizontal surface is adjoined to afirst vertical surface that extends upward from a first edge of thehorizontal surface, and is adjoined to a second vertical surface thatextends downward from a second edge of the horizontal surface. A “stair”refers to a vertical shift in the height of a set of adjoined surfaces.A “staircase structure” refers to a structure having a plurality ofstairs extending vertically.

Staircase structures have been introduced into 3D memory devices as thedemand for higher memory capacity continues to increase. A 3D memorydevice, in which memory cells are distributed vertically and laterally,can have a desired number of stairs/levels (e.g., 32, 64, and 96) alongthe vertical direction. Often, a 3D memory device can be formed by firstforming a staircase structure having a plurality of stairs, each stairhaving one or more sacrificial/dielectric layers. The sacrificial layersare then replaced with conductor layers, on which contacts are formed toconductively connect the conductor layers to a peripheral circuit. As 3Dmemory devices continue to scale up vertically (e.g., having 96-levelsor more), thinner sacrificial/dielectric layer pairs are used. Thethinner sacrificial layers can result in thinner conductor layers.

It can be difficult for the thinner conductor layers to serve as theetch-stop layer in the formation of the contacts, which are often formedby patterning the insulating structure in which the staircase structureis positioned to form openings that extend in the insulating structureand expose the conductor layers. As a remedy, conductor layers incontact with the contacts are thickened. One way is to deposit asacrificial film, e.g., silicon nitride film, using, e.g., atomiclayered deposition (ALD), on the sacrificial layers, before they arereplaced with conductor layers, to thicken the sacrificial layers. As aresult of the ALD, the sacrificial film can also cover the side surfacesof the stairs, and an etch-back process is often performed to remove theexcess portions of the sacrificial film on the side surfaces, preventingundesirable conductor portions to be formed on the side surfaces in thesubsequent gate-replacement process and to cause a short circuit.However, the etch-back process sometimes also removes portions of thesacrificial layers exposed on the side surfaces, reducing the total areaof the sacrificial layers. This can cause a reduced total area of theconductor layers and increased resistance of the 3D memory device. Thefabrication of the staircase structure thus needs to be improved.

Various embodiments in accordance with the present disclosure provide a3D memory device having a memory stack. The memory stack includes aplurality of stairs, forming a staircase structure. Each stair has aconductor layer disposed on the top surface and in contact with acontact. The conductor layer on the top surface of the respective staircan have a sufficient thickness to function as an etch-stop layer forthe formation of the contact, while the total area of other conductorlayers in the stairs stay unchanged (e.g., not affected/reduced by thefabrication process). The resistance of the conductor layers may havelittle or no increase due to the thickening of the conductor layers onthe top surfaces of the stairs.

Specifically, before the sacrificial layers being replaced withconductor layers, a stack structure with a plurality of stairs can beformed. Each stair may have a respective sacrificial layer disposed onthe respective top surface. An insulating layer can be deposited (e.g.,using ALD) and etched back to form insulating portions that cover theside surfaces of the stairs. The insulating portions can cover theconductor layers on the side surfaces of the stairs to prevent theconductor layers from being etched/damaged in the subsequent fabricationoperations. The insulating layer can include any suitable insulatingmaterial(s) that can be formed from deposition, such as silicon oxideand/or high dielectric constant (high-k) dielectric materials. Asacrificial film can then be deposited and etched back to form portionsthat cover the top surfaces and be in contact with the exposed portionsof the sacrificial layers. The sacrificial layers and the portions ofthe sacrificial film can then be replaced in the same process (e.g.,gate-replacement process) with a plurality of conductor layers. Thelengths/width of the sacrificial layers can be maintained. The conductorlayers on the top surfaces of the stairs can thus each have a greaterthickness to function as an etch-stop layer for the formation of theconductor layers.

In the 3D memory device according to the present disclosure, theconductor layer on the top surface of each stair may include a topportion and a bottom portion. The bottom portion may be in contact withan underneath dielectric layer, and the top portion may be above thebottom portion and in contact with the contact. The end of the topportion facing away from the memory stack may exceed the bottom portionby a distance, which is determined based on the thickness of therespective insulating portion covering the side surface. The insulatingportion can be covered by the top portion. The distance (i.e., thethickness of the insulating portion) can be in a range of about 0.1 nmto about 20 nm. In some embodiments, the distance is between about 1 nmto about 10 nm.

FIG. 1 illustrates a 3D memory device 100 having a memory stack 112above a substrate 102. Memory stack 112 may include interleaved aplurality of conductor layers 106 and a plurality dielectric layers 108,and a plurality of 3D memory strings 110 extending in memory stack 112into substrate 102. 3D memory device 100 may also include an insulatingstructure 116 in which memory stack 112 is positioned and a plurality ofcontacts 114 extending in an insulating structure 116 and in contactwith respective conductor layers 106. It is noted that x-, y-, andz-axes are added in FIGS. 1, 2A-2D, and 3A-3F to further illustrate thespatial relationship of the components in the structures/devices. Forexample, substrate 102 includes two lateral surfaces (e.g., a topsurface and a bottom surface) extending laterally in the x- and y-axes(the lateral directions). As used herein, whether one component (e.g., alayer or a device) is “on,” “above,” or “below” another component (e.g.,a layer or a device) of a semiconductor device (e.g., 3D memory device100) is determined relative to the substrate of the semiconductor device(e.g., substrate 102) in the z-axis (the vertical direction or thicknessdirection) when the substrate is positioned in the lowest plane of thesemiconductor device in the y-axis. The same notion for describing thespatial relationship is applied throughout the present disclosure.

In some embodiments, substrate 102 includes silicon (e.g., singlecrystalline silicon, c-Si), silicon germanium (SiGe), gallium arsenide(GaAs), germanium (Ge), silicon on insulator (SOI), or any othersuitable materials. In some embodiments, insulating structure 116includes silicon oxide. In some embodiments, contacts 114 includesconductor materials including, but not limited to, W, Co, Cu, Al, dopedsilicon, silicides, or any combination thereof.

Memory stack 112 may include a plurality of stairs 104, forming astaircase structure. Memory stack 112 may include interleaved aplurality of conductor layers 106 and a plurality of dielectric layers108 extending in the x- and y-axes, forming a plurality ofconductor/dielectric pairs stacking along the z-axis/vertical direction.Interleaved conductor layers 106 and dielectric layers 108 in memorystack 112 can alternate along the vertical direction. In other words,except for the ones at the top or bottom of memory stack 112, eachconductor layer 106 can be adjoined by two dielectric layers 108 on bothsides, and each dielectric layer 108 can be adjoined by two conductorlayers 106 on both sides. Conductor layers 106 can each have the samethickness or different thicknesses. Similarly, dielectric layers 108 caneach have the same thickness or different thicknesses. Conductor layers106 can include conductor materials including, but not limited to, W,Co, Cu, Al, doped silicon, silicides, or any combination thereof.Dielectric layers 108 can include dielectric materials including, butnot limited to, silicon oxide, silicon nitride, silicon oxynitride, orany combination thereof.

The intersection of 3D memory strings 110 and conductor layers 106 canform an array of memory cells in memory stack 112. In some embodiments,each 3D memory string 110 is a “charge trap” type of NAND memory stringincluding a semiconductor channel and a memory film. In someembodiments, the semiconductor channel includes silicon, such asamorphous silicon, polysilicon, or single crystalline silicon. In someembodiments, the memory film is a composite dielectric layer including atunneling layer, a storage layer (also known as “charge trap/storagelayer”), and a blocking layer. Each 3D memory string 110 can have acylinder shape (e.g., a pillar shape). The semiconductor channel, thetunneling layer, the storage layer, and the blocking layer of memoryfilm are arranged along a direction from the center toward the outersurface of the pillar in this order, according to some embodiments. Thetunneling layer can include silicon oxide, silicon oxynitride, or anycombination thereof. The storage layer can include silicon nitride,silicon oxynitride, silicon, or any combination thereof. The blockinglayer can include silicon oxide, silicon oxynitride, high-k dielectrics,or any combination thereof. In one example, the blocking layer caninclude a composite layer of silicon oxide/silicon oxynitride/siliconoxide (ONO). In another example, the blocking layer can include a high-kdielectric layer, such as aluminum oxide (Al₂O₃), hafnium oxide (HfO₂)or tantalum oxide (Ta₂O₅) layer, and so on.

In some embodiments, 3D memory strings 110 further include a pluralityof control gates (each being part of a word line). Each conductor layer106 in memory stack 112 can act as a control gate for each memory cellof 3D memory string 110. In some embodiments, each 3D memory string 110includes two plugs at a respective end in the vertical direction. Oneplug, at the lower end of 3D memory string 110 and in contact with thesemiconductor channel, can include a semiconductor material, such assingle-crystal silicon, that is epitaxially grown from substrate 102.The plug can function as the channel controlled by a source select gateof 3D memory string 110. As used herein, the “upper end” of a component(e.g., 3D memory string 110) is the end farther away from substrate 102in the z-axis, and the “lower end” of the component (e.g., 3D memorystring 110) is the end closer to substrate 102 in the z-axis whensubstrate 102 is positioned in the lowest plane of 3D memory device 100.Another Plug can include semiconductor materials (e.g., polysilicon). Bycovering the upper end of 3D memory string 110 during the fabricationprocess, the other plug can function as an etch stop layer to preventetching of dielectrics filled in 3D memory string 110, such as siliconoxide and silicon nitride. In some embodiments, the other plug functionsas the drain of 3D memory string 110.

As shown in FIG. 1 , each stair 104 may include one or moreconductor/dielectric pairs stacking along the vertical direction. Insome embodiments, each stair 104 includes conductor layer 106 disposedon the respective top surface to be in contact with the respectivecontact 114, which is conductively connected to a peripheral circuit(not shown) of memory stack 112.

FIGS. 2A-2D illustrate a partial fabrication process 200 to form stairsin a staircase structure using existing operations. FIG. 2B is acontinuation of FIG. 2A. FIG. 2C is a continuation of FIG. 2B. FIG. 2Dis a continuation of FIG. 2C. Specifically, FIGS. 2A-2D illustrate theprocess to thicken the sacrificial layer on the top surface of eachstair before the gate-replacement process. As shown in FIG. 2A, astaircase structure 202 having a plurality of stairs can be formed. Forease of illustration, the substrate is omitted from FIGS. 2A-2D, and twoconsecutive stairs 202-1 and 202-2 are shown to represent the stairs instaircase structure 202. Staircase structure 202 includes interleaved aplurality of dielectric layers 204 and a plurality of sacrificial layers206, stacking along the vertical direction. Sacrificial layers 206 caninclude a suitable material different from the material(s) of dielectriclayers 204 and can be replaced with conductor layers in the subsequentgate-replacement operation. For example, sacrificial layers 206 includessilicon nitride and dielectric layers 204 includes silicon oxide. Eachof stairs 202-1 and 202-2 includes one or more pairs ofsacrificial/dielectric pairs. Stairs 201-1 and 202-2 each includes aside surface 208 extending along the vertical direction and exposingsacrificial layers 206 in the respective stair.

As shown in FIGS. 2A and 2B, staircase structure 202 is etchedvertically to expose sacrificial layer 206 on the top surface of eachstair, e.g., 202-1 and 202-2. In FIG. 2C, a sacrificial film 210 isdeposited to cover at least the top surfaces of the stairs, e.g., 202-2and 202-2, and increase the total thickness of the sacrificial materialon the top surface of each stair, e.g., a sum of the thickness ofsacrificial layer 206 and the thickness of sacrificial film 210, to adesired value/range. Sacrificial film 210 can be formed by ALD and caninclude, e.g., silicon nitride. In FIG. 2C, to remove any portions ofsacrificial film 210 on side surfaces 208 of the stairs, e.g., 202-1 and202-2, a recess etch is performed. The recess etch can also remove aportion of the sacrificial material on the top surface of each stair,e.g., 202-1 and 202-2, such that the final thickness of the sacrificialmaterial on the top surface is desirable for the gate-replacementprocess. The subsequently-formed conductor layers on the top surfaces ofthe stairs, e.g., 202-1 and 202-2, can also have sufficient thicknessesto function as an etch-stop layer for the subsequent formation ofcontacts.

However, as shown in FIG. 2D, the recess etch can undesirably remove aportion of each sacrificial layer 206 exposed on side surfaces 208 ofthe stairs, e.g., 202-1 and 202-2, in addition to the removal of theportions of sacrificial film 210 on side surfaces 208. Sacrificiallayers 206 then have reduced lengths/widths along the x-axis, causingthe conductor layers in the memory stack, formed by the gate-replacementprocess, to have reduced lengths/widths along the x-axis. The portioncan be about 20 nm to about 50 nm, e.g., approximately 30 nm, along thex-axis. In subsequent operations, after sacrificial layers 206 arereplaced with conductor layers, an insulating structure is formed tofill up the space formed by the removal of sacrificial layers 206, suchthat the lateral distance/space filled with the insulating structure,caused by the removal of the portions of sacrificial layers 206, isabout 20 nm to about 50 nm, e.g., approximately 30 nm. The resistance ofthe conductor layers can be undesirably increased.

Embodiments of the present disclosure provide the structure andfabrication method of stairs in a 3D memory device, which includes asubstrate, a memory stack having a staircase structure, a plurality ofmemory strings, and an insulating structure in which the memory stack ispositioned. The overall structure of the 3D memory device may be similarto 3D memory device 100. The memory stack/staircase structure mayinclude a plurality of stairs stacking along the z-axis, similar tostairs 104. However, the structure and fabrication method to form stairsin the present disclosure may be different from those of the existingtechnology and are described in detail in FIGS. 3A-3F. In the presentdisclosure, two consecutive stairs are illustrated to represent thefabrication and structures of a plurality of stairs, e.g., all stairs,in the 3D memory device. For simplicity of illustration, embodiments ofthe present disclosure emphasize on the formation of stairs, e.g.,thickening the conductor layers in contact with the contacts withoutreducing the lengths/widths of the conductor layers, and other parts areomitted from the description of FIGS. 3A-3F.

FIGS. 3A-3F illustrate an exemplary fabrication method 300 to form aplurality of stairs in a memory stack, according to some embodiments.FIG. 3B is a continuation of FIG. 3A, and FIG. 3C is a continuation ofFIG. 3B. FIG. 3D is a continuation of FIG. 3C, FIG. 3E is a continuationof FIG. 3D, and FIG. 3F is a continuation of FIG. 3E. In the memorystack, the lengths/widths of the conductor layers along the x-axis aremaintained (or the lengths/width of the sacrificial layers are notaffected by the fabrication process). FIG. 4 illustrates a flowchart 400of method 300, according to some embodiments. It is understood that theoperations shown in method 300 are not exhaustive and that otheroperations can be performed as well before, after, or between any of theillustrated operations. Further, some of the operations may be performedsimultaneously, or in a different order than shown in FIGS. 3A-3F and 4.

Referring to FIG. 4 , method 300 starts at operation 402, in which astack structure having a plurality of stairs is formed, each stairexposing a dielectric layer on the respective top surface and one ormore sacrificial layers on the respective side surface. FIG. 3Aillustrates a corresponding structure.

As shown in FIG. 3A, a staircase structure 302 having a plurality ofstairs, e.g., 302-1 and 302-2, may be formed on a substrate (not shown).Staircase structure 302 may include a plurality of dielectric layers 304and a plurality of sacrificial layers 306 stacked alternatingly alongthe vertical direction. Each sacrificial layer 306 and an underlyingdielectric layer 304 may form a sacrificial/dielectric pair. In someembodiments, each stair, e.g., 302-1 and 302-2, includes one or moresacrificial/dielectric pairs. That is, each stair may include one ormore sacrificial layers 306 and one or more dielectric layers 304arranged alternatingly along the vertical direction. In someembodiments, each stair includes more than one sacrificial/dielectricpair. Sacrificial layers 306 and dielectric layers 304 may includedifferent materials and thus can be selectively etched, e.g., in thegate-replacement process.

Staircase structure 302 can be formed by repetitively etching a stackstructure having a plurality of interleaved initial dielectric layersand initial sacrificial layers using an etch mask, e.g., a patterned PRlayer over the respective stack structure. Each initial sacrificiallayer and the underlying initial dielectric layer may be referred to asa dielectric pair. In some embodiments, one or more dielectric pairs canform one level/stair. During the formation of staircase structure 302,the PR layer is trimmed (e.g., etched incrementally and inwardly fromthe boundary of the material stack, often from all directions) and usedas the etch mask for etching the exposed portion of the stack structure.The amount of trimmed PR can be directly related (e.g., determinant) tothe dimensions of the stairs. The trimming of the PR layer can beobtained using a suitable etch, e.g., an isotropic etching process, suchas wet etching. One or more PR layers can be formed and trimmedconsecutively for the formation of staircase structure 302. Eachdielectric pair can be etched, after the trimming of the PR layer, usingsuitable etchants to remove a portion of both the initial sacrificiallayer and the underlying initial dielectric layer. The etched initialsacrificial layers and initial dielectric layers may respectively formsacrificial layers 306 and dielectric layers 304, which form stairs inthe stack structure. The PR layer(s) can then be removed.

As shown in FIG. 3A, staircase structure 302 is etched to exposedielectric layer 304 on the top surface of each stair, e.g., 302-1 and302-2. Each stair may include a side surface 308, which exposes one ormore sacrificial layers 306 in the respective stair. In someembodiments, side surface 308 also exposes one or more dielectric layers304, including dielectric layer 304 on the top surface of the respectivestair.

Referring back to FIG. 4 , after the formation of the staircasestructure, method 300 proceeds to operation 404, in which an insulatinglayer is formed to cover at least the side surface of each stair. FIG.3B illustrates a corresponding structure.

As shown in FIG. 3B, an insulating layer 312 may be formed to cover atleast side surfaces 308 of stairs, e.g., 302-1 and 302-2, of staircasestructure 302. Insulating layer 312 may cover at least the exposedsacrificial layers 306 on side surfaces 308 of the stairs, e.g., 302-1and 302-2. In some embodiments, insulating layer 312 also covers, e.g.,partially or fully, top surfaces of stairs, e.g., 302-1 and 302-2, andbe in contact with dielectric layers 304 on the top surfaces. For easeof description, insulating layer 312 may include a plurality of firstportions 312-1 each deposited on the top surface of the respective stair(e.g., 302-1/302-2), and a plurality of second portions 312-2 eachdeposited on the side surface of the respective stair (e.g.,302-1/302/2). Insulating layer 312 can be formed using a suitabledeposition process such as ALD, and may include a dielectric materialthat can be formed using ALD. Insulating layer 312 can include the samematerial(s) as dielectric layers 304 or include different materials thandielectric layers 304. Insulating layer 312 can include materials thesame as or different from the materials of dielectric layers 304. Insome embodiments, insulating layer 312 includes a dielectric materialdifferent from the material(s) of sacrificial film 310, such that theetching of sacrificial film 310 can be blocked by insulating layer 312to prevent the etch-back of sacrificial layer 306, which has the samematerial(s) as sacrificial film 310 (illustrated in subsequent steps).For example, the dielectric material of insulating layer 312 may have anetching selectivity that is sufficiently high compared with thematerial(s) of sacrificial film 310 to prevent the removal of insulatinglayer 312 while etching sacrificial film 310. In some embodiments,insulating layer 312 includes silicon oxide and/or a high-k dielectricmaterial, such as aluminum oxide (Al₂O₃), hafnium oxide (HfO₂), and/ortantalum oxide (Ta₂O₅). In some embodiments, insulating layer 312includes silicon oxide. Insulating layer 312 may be sufficiently thickto prevent sacrificial layers 306 from being etched in subsequentoperations. In some embodiments, other suitable deposition methods suchas chemical vapor deposition (CVD) and/or physical vapor deposition(PVD) are also used to form insulating layer 312.

Referring back to FIG. 4 , after the formation of the insulating layer,method 300 proceeds to operation 406, in which the first portions of theinsulating layer and the dielectric layers on the top surfaces of thestairs are removed to (i) retain the second portions of the insulatinglayer on the side surfaces of the stairs, and (ii) expose thesacrificial layers on the top surfaces of the stairs. FIG. 3Cillustrates a corresponding structure.

As shown in FIG. 3C, first portions 312-1 of insulating layer 312 anddielectric layers 304 on the top surface of each stair, e.g., 302-1 and302-2, can be removed. Second portions 312-2 of insulating layer 312 canbe retained on side surfaces 308 of the stairs. Sacrificial layer 306(e.g., underlying the respective dielectric layer 304 being removed) maybe exposed on the top surface of each stair, e.g., 302-1 and 302-2. Athickness D of second portion 312-2 of insulation layer 312 along thex-axis, may be in a range of about 0.1 nm to about 20 nm, such as 0.1 nmto 20 nm. In some embodiments, the thickness of second portion 312-2 isin a range of about 1 nm to about 10 nm, such as 1 nm to 10 nm (e.g., 1nm, 1.5 nm, 2 nm, 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, 5 nm, 5.5 nm, 6nm, 6.5 nm, 7 nm, 7.5 nm, 8 nm, 8.5 nm, 9 nm, 9.5 nm, 10 nm, any rangebounded by the lower end by any of these values, or in any range definedby any two of these values). In some embodiments, the thickness D ofsecond portion 312-2 of insulation layer 312 is smaller than thethickness of part of sacrificial layers 206 that is etched back as shownin FIG. 2D. An anisotropic etching process, e.g., a dry etch, isemployed to remove first portions 312-1 of insulating layer 312 anddielectric layers 304. Optionally, an isotropic etching process, e.g.,wet etching, can be employed to trim the thickness of second portion312-2 to be in a desired range.

Referring back to FIG. 4 , after the removal of the second portions ofthe insulating layer and the dielectric layers, method 300 proceeds tooperation 408, in which a sacrificial film is formed to cover at leastthe top surface of each stair. FIG. 3D illustrates a correspondingstructure.

As shown in FIG. 3D, a sacrificial film 310 can be formed to cover atleast the top surface of each stair, e.g., 302-1 and 302-2. Sacrificialfilm 310 may be in contact with sacrificial layers 306 on the topsurfaces of the stairs, e.g., 302-1 and 302-2. In some embodiments,sacrificial film 310 also covers, e.g., partially or fully, sidesurfaces 308 of the stairs, e.g., 302-1 and 302-2. Sacrificial film 310may include the same material as the material(s) of sacrificial layers306, and may have a desirable thickness which allows asufficiently-thick conductor layer to be subsequently formed on the topsurface of each stair. In some embodiments, sacrificial film 310 isdeposited using a suitable deposition process such as ALD. In someembodiments, other suitable deposition methods, such as CVD and/or PVD,are also used to form sacrificial film 310.

Referring back to FIG. 4 , after the formation of the sacrificial film,method 300 proceeds to operation 410, in which, the first portions ofthe sacrificial film on the side surfaces of the stairs to (i) retainthe second portions of the sacrificial film on the top surfaces of thestairs, and (ii) expose the second portions of the insulating layer onthe side surfaces of the stairs. FIG. 3E illustrates a correspondingstructure.

As shown in FIG. 3E, the first portions of sacrificial film 310 on sidesurfaces 308 of the stairs, e.g., 302-1 and 302-2, may be removed, andsecond portions 312-2 of insulating layer 312 can be exposed. Anisotropic etching process, e.g., wet etch, can be performed to removethe first portions of sacrificial film 310. The remaining portions ofsacrificial film 310 on the top surfaces of the stairs, e.g., 302-1 and302-2, may form second portions 310-2 of sacrificial film 310. Eachsecond portion 310-2 of sacrificial film 310 may be in contact with therespective sacrificial layer 306 on the top surface of the respectivestair.

As shown in FIG. 3E, second portion 310-2 may be above and in contactwith the respective sacrificial layer 306 on the top surface of eachstair, e.g., 302-1 and 302-2. The end of second portion 310-2 facingaway from staircase structure 302 may exceed sacrificial layer 306 alongthe x-axis by a distance determined by the thickness of second portion312-2 of insulating layer 312. In some embodiments, the top surface ofsecond portion 310-2 of sacrificial film 310 in one stair, e.g., 302-2,is higher than a bottom surface of the stair immediately above it, e.g.,302-1. In some embodiments, the bottom surface of a respective stair,e.g., 302-1 or 302-2, is the bottom surface of dielectric layer 304 atthe bottom of the stair.

After second portions 310-2 of sacrificial film 310 are formed, method300 proceeds to operation 412, in which the sacrificial layers and thesecond portions of the sacrificial film are replaced with a plurality ofconductor layers. FIG. 3F illustrates a corresponding structure.

As shown in FIG. 3F, sacrificial layers 306 and second portions 310-2 ofsacrificial film 310 may be replaced with a plurality of conductorlayers 320 in a gate-replacement process. In each stair, e.g., 302-1 and302-2, the conductor layer 320 on the top surface includes a top portion320-1 and a bottom portion 320-2. Top portion 320-1 may be formed by thereplacement of second portion 310-2 of the sacrificial film with aconductor material, and bottom portion 320-2 may be formed by thereplacement of sacrificial layer 306 with the conductor material. Topportion 320-1 of conductor layer 320 may have a shape similar to that ofthe respective second portion 310-2 of sacrificial film 310. In someembodiments, the end of top portion 320-1 facing away from staircasestructure 302 may exceed bottom portion 320-2 along the x-axis by thedistance determined by the thickness of second portion 312-2 ofinsulating layer 312. Top portion 320-1 of conductor layer 320 may beexposed by staircase structure 302 (e.g., not covered by the stairimmediately above the respective stair) and cover the respective secondportion 312-2 of insulating layer 312, which may cover the side surfaceof the respective stair, e.g., cover bottom portion 320-2 of theconductor layers 320 on the top surface and any other conductor layers320 in the respective stair. Conductor layers 320 may intersect withmemory strings (structure and fabrication process omitted in FIG. 3 )extending in staircase structure 302 and form an array of memory cells.Staircase structure 302 may form a memory stack.

In some embodiments, conductor layers 320 may be formed by removingsecond portions 310-2 of sacrificial film 310 and sacrificial layers 306using an isotropic etching process, e.g., wet etch, to form a pluralityof lateral recesses in staircase structure 302. The conductor material,e.g., W, Co, Al, Cu, doped silicon, and/or silicides, may be depositedto fill up the lateral recesses, forming conductor layers 320. Theconductor material can be deposited using any suitable deposition methodsuch as CVD, PVD, ALD, or a combination thereof.

In some embodiments, after the formation of conductor layers 320, aninsulating structure 318 is formed to surround staircase structure 302such that staircase structure 302 is in insulating structure 318.Insulating structure 318 may be in contact with side surfaces 308 of thestairs (or second portions 312-2 of insulating layer 312) and topsurfaces of the stairs. Insulating structure 318 may include anysuitable insulating material(s) such as silicon oxide and can be formedby any suitable deposition process(es) such as CVD, PVD, and/or ALD. Anopening, for forming a contact, may be formed to extend in insulatingstructure 318 and expose the top surface of a respective stair, e.g.,302-1 and 302-1. In some embodiments, the total thickness of top portion320-1 and bottom portion 320-2 is sufficient to function as an etch-stoplayer for the formation of the respective opening (e.g., for forming therespective contact). That is, a portion of top portion 320-1 ofconductor layer 320 at the top surface of the respective stair can beexposed by the opening. A suitable conductive material, e.g., W, Co, Al,Cu, doped silicon, and/or silicides, may be deposited to fill up theopening and form a contact 314. The conductive material can be depositedusing any suitable deposition method such as CVD, PVD, ALD, or acombination thereof. Optionally, a planarization process, such as achemical mechanical planarization and/or a wet etch, can be performed onthe top surface of insulating structure 318 to remove any excessinsulating material(s) and/or conductive material(s).

According to the embodiments of the present disclosure, a 3D memorydevice includes a memory stack having a plurality of stairs. Each stairmay include interleaved one or more conductor layers and one or moredielectric layers. Each of the stairs includes one of the conductorlayers on a top surface of the stair, the one of the conductor layershaving (i) a bottom portion in contact with one of the dielectriclayers, and (ii) a top portion exposed by the memory stack and incontact with the bottom portion. A lateral dimension of the top portionmay be less than a lateral dimension of the bottom portion. An end ofthe top portion that may be facing away from the memory stack laterallyexceeds the bottom portion by a distance.

In some embodiments, the 3D memory device further includes an insulatingportion covered by the top portion and filling up the distancelaterally. The insulating portion may (i) cover the bottom portion andthe rest of the one or more conductor layers on the side surface of thestair, and (ii) be in contact with the top portion of another stairimmediately below the respective stair.

In some embodiments, a top surface of the top portion is higher than thebottom surface of a third stair immediately above the respective stair.

In some embodiments, the distance is in a range of about 0.1 nm to about20 nm.

In some embodiments, the distance is in a range of about 1 nm to about10 nm.

In some embodiments, the insulating portion includes at least one ofsilicon oxide or a high-k dielectric.

In some embodiments, the 3D memory device further includes an insulatingstructure in which the memory stack is located, and a contact extendingin the insulating structure and in contact with the top portion of therespective one of the conductor layers.

According to embodiments of the present disclosure, a 3D memory deviceincludes a memory stack having a plurality of stairs. Each stair mayinclude interleaved one or more conductor layers and one or moredielectric layers. Each of the stairs may include one of the conductorlayers on a top surface of the stair. The one of the conductor layersmay include (i) a bottom portion in contact with one of the dielectriclayers, and (ii) a top portion exposed by the memory stack and incontact with the bottom portion. An end of the top portion that may befacing away from the memory stack laterally exceeds the bottom portionby a distance in a range of about 0.1 nm to about 20 nm.

In some embodiments, the distance is in a range of about 1 nm to about10 nm.

In some embodiments, the 3D memory device further includes an insulatingportion covered by the top portion and filling up the distancelaterally. The insulating portion may (i) cover the bottom portion andthe rest of the one or more conductor layers on the side surface of thestair, and (ii) be in contact with the top portion of another stairimmediately below the respective stair.

In some embodiments, a lateral dimension of the top portion is less thana lateral dimension of the bottom portion.

In some embodiments, the insulating portion comprises at least one ofsilicon oxide or high-k dielectric.

In some embodiments, the 3D memory device further includes an insulatingstructure in which the memory stack is located, and a contact extendingin the insulating structure and in contact with the top portion of therespective one of the conductor layers.

According to embodiments of the present disclosure, a method for forminga 3D memory device includes the following operations. First, adielectric stack may be formed to have interleaved a plurality ofsacrificial layers and a plurality of dielectric layers. A stair may beformed in the dielectric stack. The stair may include one or moresacrificial layers of the plurality of sacrificial layers and one ormore dielectric layers of the plurality of dielectric layers. The stairmay expose one of the sacrificial layers on a top surface and the one ormore sacrificial layers on a side surface. An insulating portion may beformed to cover the side surface of the stair to cover the one or moresacrificial layers. A sacrificial portion may be formed to cover the topsurface of the stair, the sacrificial portion being in contact with theone of sacrificial layers. The one or more sacrificial layers and thesacrificial portion may be replaced with one or more conductor layers.

In some embodiments, forming the insulating portion includes forming thestair to expose one of the dielectric layers on the top surface, formingan insulating layer to cover the top and side surfaces of the stair, andremoving a portion of the insulating layer on the top surface of thestair and the one of the dielectric layers to expose the one ofsacrificial layers. A remaining portion of the insulating layer on theside surface of the stair may form the insulating portion.

In some embodiments, forming the insulating layer includes performing anALD.

In some embodiments, removing the portion of the insulating layerincludes performing an anisotropic etching process.

In some embodiments, forming the insulating layer comprises depositing alayer of at least one of silicon oxide or high-k dielectric.

In some embodiments, forming the sacrificial portion includes forming asacrificial film to cover at least the one of the sacrificial layers onthe top surface of the stair, and removing a portion of the sacrificialfilm on the side surface of the stair to expose the insulating portion.A remaining portion of the sacrificial film on the top surface of thestair may form the sacrificial portion.

In some embodiments, forming the insulating layer includes depositing alayer of dielectric material that is different from a material of thesacrificial film.

In some embodiments, removing the portion of the sacrificial filmincludes performing an isotropic etching process.

In some embodiments, forming the sacrificial film includes depositing afilm of sacrificial material that is the same as a material of theplurality of sacrificial layers.

In some embodiments, replacing the one or more sacrificial layers andthe sacrificial portion with one or more conductor layers includesremoving the one or more sacrificial layers and the sacrificial portionto form one or more lateral recesses, and depositing a conductormaterial to fill in the lateral recesses and form the one or moreconductor layers.

In some embodiments, the method further includes forming an insulatingstructure surrounding the dielectric stack such that the dielectricstack is in the insulating structure, and forming a contact extending inthe insulating stack and in contact with a conductor layer on the topsurface of the stair.

The foregoing description of the specific embodiments will so reveal thegeneral nature of the present disclosure that others can, by applyingknowledge within the skill of the art, readily modify and/or adapt forvarious applications such specific embodiments, without undueexperimentation, without departing from the general concept of thepresent disclosure. Therefore, such adaptations and modifications areintended to be within the meaning and range of equivalents of thedisclosed embodiments, based on the teaching and guidance presentedherein. It is to be understood that the phraseology or terminologyherein is for the purpose of description and not of limitation, suchthat the terminology or phraseology of the present specification is tobe interpreted by the skilled artisan in light of the teachings andguidance.

Embodiments of the present disclosure have been described above with theaid of functional building blocks illustrating the implementation ofspecified functions and relationships thereof. The boundaries of thesefunctional building blocks have been arbitrarily defined herein for theconvenience of the description. Alternate boundaries can be defined solong as the specified functions and relationships thereof areappropriately performed.

The Summary and Abstract sections may set forth one or more but not allexemplary embodiments of the present disclosure as contemplated by theinventor(s), and thus, are not intended to limit the present disclosureand the appended claims in any way.

The breadth and scope of the present disclosure should not be limited byany of the above-described exemplary embodiments, but should be definedonly in accordance with the following claims and their equivalents.

What is claimed is:
 1. A three-dimensional (3D) memory device,comprising: a memory stack comprising a plurality of interleavedconductor layers and dielectric layers, wherein the memory stackcomprises a plurality of stairs, each stair comprising: a firstconductor layer comprising: an inner portion with a first thickness andbeing sandwiched between two adjacent conductor layers in a verticaldirection, an exposed portion with a second thickness larger than thefirst thickness, and being in contact with a contact structure, and aprotruded portion with a third thickness less than the second thickness,and protruding from the second portion in a lateral direction; and aplurality of second conductor layers each with the first thickness,wherein side surfaces of the plurality of second conductor layers arecovered by an insulating layer located under the protruded portion. 2.The 3D memory device of claim 1, wherein the second thickness of eachexposed portion is less than a sum of the first thickness and athickness of an adjacent dielectric layer with respect to the firstconductor layer.
 3. The 3D memory device of claim 1, wherein the memorystack further comprises a platform comprising: a top conductor layerincluding: a main portion with uniform thickness, and an extendedportion with the third thickness, and extending from the main portion inthe lateral direction; and a plurality of lower conductor layers,wherein side surfaces of the plurality of lower conductor layers arecovered by an other insulating layer under the extended portion.
 4. The3D memory device of claim 1, wherein the first conductor layer is longerthan the second conductor layer in the lateral direction.
 5. The 3Dmemory device of claim 1, wherein the protruded portion has a topsurface that is flush with a top surface of the exposed portion.
 6. The3D memory device of claim 1, wherein the third thickness is a differencebetween the first thickness and the second thickness.
 7. The 3D memorydevice of claim 1, wherein the protruded portion has a length in a rangeof about 0.1 nm to about 20 nm in the lateral direction.
 8. The 3Dmemory device of claim 1, wherein the insulating layer comprises atleast one of silicon oxide or a high dielectric (high-k) dielectric. 9.The 3D memory device of claim 1, wherein the insulating layer is a partof an insulating structure, and the insulating structure encapsulatesthe memory stack.
 10. The 3D memory device of claim 9, wherein theinsulating structure further encapsulates the contact structure.
 11. Athree-dimensional (3D) memory device, comprising: a memory stackcomprising a plurality of interleaved conductor layers and dielectriclayers, wherein the memory stack comprises a plurality of stairs, eachstair comprising: a first conductor layer comprising: an inner portionwith a first thickness and being sandwiched between two adjacentconductor layers in a vertical direction; an exposed portion with asecond thickness larger than the first thickness, and being in contactwith a contact structure; and a protruded portion with a third thicknessless than the second thickness, and protruding along a lateral directionfrom the exposed portion into an insulating structure.
 12. The 3D memorydevice of claim 11, wherein the insulating structure covers a sidesurface of each stair under the protruded portion.
 13. The 3D memorydevice of claim 11, wherein the insulating structure encapsulates thememory stack and the contact structure.
 14. The 3D memory device ofclaim 11, wherein the second thickness of each exposed portion is lessthan a sum of the first thickness and a thickness of an adjacentdielectric layer with respect to the first conductor layer.
 15. The 3Dmemory device of claim 11, wherein the memory stack further comprises aplatform, the platform comprises a top conductor layer comprising: amain portion with uniform thickness; and an extended portion with thethird thickness, and extending from the main portion in the lateraldirection into the insulating structure.
 16. The 3D memory device ofclaim 15, wherein the first conductor layer is longer than the secondconductor layer in the lateral direction.
 17. The 3D memory device ofclaim 11, wherein the protruded portion has a top surface that is flushwith a top surface of the exposed portion.
 18. The 3D memory device ofclaim 11, wherein the third thickness is a difference between the firstthickness and the second thickness.
 19. The 3D memory device of claim11, wherein the protruded portion has a third length in a range of about0.1 nm to about 20 nm in the lateral direction.
 20. The 3D memory deviceof claim 11, wherein the insulating structure comprises at least one ofsilicon oxide or a high dielectric (high-k) dielectric.